(China (Mainland))
Product Summary
The M29W400DB55N6 is a 4 Mbit (512 Kb x 8 or 256 Kb x 16, boot block) 3 V supply Flash memory.
Parametrics
M29W400DB55N6 absolute maximum ratings: (1)Temperature under bias: -50 to 125 ℃; (2)Storage temperature: -65 to 150 ℃; (3)Input or output voltage: -0.6 to VCC+0.6 V; (4)Supply voltage: -0.6 to 4 V; (5)Identification voltage: -0.6 to 13.5 V.
Features
M29W400DB55N6 features: (1)Supply voltage: VCC = 2.7 V to 3.6 V for Program, Erase and Read; (2)Access time: 45, 55, 70 ns; (3)Programming time: 10 μs per byte/word typical; (4)11 memory blocks: 1 boot block (top or bottom location), 2 parameter and 8 main blocks; (5)Program/Erase controller: Embedded byte/word program algorithms; (6)Erase Suspend and Resume modes: Read and Program another block during Erase Suspend.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 M29W400DB55N6 |
STMicroelectronics |
Flash 512Kx8 or 256Kx16 55 |
Data Sheet |
Negotiable |
|
||||
|
M29W400DB55N6E |
STMicroelectronics |
Flash STD FLASH |
Data Sheet |
Negotiable |
|
||||
|
M29W400DB55N6F |
STMicroelectronics |
Flash 4 Mbit (512 ) 3 V |
Data Sheet |
Negotiable |
|
||||
