(China (Mainland))
Product Summary
The BYV32EB-200 is a ultrafast, rugged rectifier diode. The BYV32EB-200 dual, ultra-fast, epitaxial rectifier diode intended for use as output rectifiers in high frequency switched mode power supplies. The BYV32EB-200 is supplied in the SOT78 conventional leaded package.
Parametrics
BYV32EB-200 absolute maximum ratings: (1)IO(AV) Average rectified output current square wave; d = 0.5; Tmb≤115 ℃: 20 A; (2)IFRM Repetitive peak forward current per diode, t = 25 ms; d = 0.5, Tmb≤115 ℃:20 A; (3)IFSM Non-repetitive peak forward, t = 10 ms: 125 A; (4)current per diode t = 8.3 ms, sinusoidal; with reapplied sinusoidal; with reapplied VRWM(max): 137 A; (5)IRRM Repetitive peak reverse current per diode, tp = 2 ms; d = 0.001: 0.2 A; (6)IRSM Non-repetitive peak reverse current per diode, tp = 100 ms: 0.2 A; (7)Tstg Storage temperature: -40 150 ℃; (8)Tj Operating junction temperature: 150 ℃.
Features
BYV32EB-200 features: (1)Low forward volt drop; (2)Fast switching; (3)Soft recovery characteristic; (4)Reverse surge capability; (5)High thermal cycling performance; (6)Low thermal resistance.
Diagrams
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 BYV32EB-200 /T3 |
NXP Semiconductors |
Rectifiers TAPE-7 REC-EPI |
Data Sheet |
Negotiable |
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BYV32EB-200,118 |
NXP Semiconductors |
Rectifiers TAPE-7 REC-EPI |
Data Sheet |
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