Product Summary
The AT28BV256-20TI is a high-performance electrically erasable and programmable read-only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufac-tured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of just 54 mW. When the AT28BV256-20TI is deselected, the CMOS standby current is less than 200 μA. The AT28BV256-20TI is accessed like a Static RAM for the read or write cycle without the need for external components.
Parametrics
AT28BV256-20TI absolute maximum ratings: (1)Temperature under Bias:-55℃ to +125℃; (2)Storage Temperature:-65℃ to +150℃; (3)All Input Voltages (including NC Pins) with Respect to Ground:-0.6V to +6.25V; (4)All Output Voltages with Respect to Ground:-0.6V to VCC + 0.6V; (5)Voltage on OE and A9 with Respect to Ground:-0.6V to +13.5V.
Features
AT28BV256-20TI features: (1)Single 2.7V to 3.6V Supply; (2)Fast Read Access Time:200 ns; (3)Automatic Page Write Operation:Internal Address and Data Latches for 64 Bytes, Internal Control Timer; (4)Fast Write Cycle Times: Page Write Cycle Time: 10 ms Maximum, 1- to 64-byte Page Write Operation; (5)Low Power Dissipation: 15 mA Active Current, 20 μA CMOS Standby Current; (6)Hardware and Software Data Protection; (7)Data Polling for End of Write Detection ; (8)High Reliability CMOS Technology: Endurance: 10,000 Cycles, Data Retention: 10 Years; (9)JEDEC Approved Byte-wide Pinout; (10)Industrial Temperature Ranges; (11)Green (Pb/Halide-free) Packaging Option.
Diagrams
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![]() AT28BV256-20TI |
![]() Atmel |
![]() EEPROM 256K 2.7V - 3.6V SDP- 200NS IND TEMP |
![]() Data Sheet |
![]() Negotiable |
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![]() Other |
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![]() Atmel |
![]() EEPROM 16k bit |
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![]() Data Sheet |
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![]() Data Sheet |
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![]() Atmel |
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![]() Data Sheet |
![]() Negotiable |
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![]() AT28BV16-25SC |
![]() Atmel |
![]() EEPROM 16k bit |
![]() Data Sheet |
![]() Negotiable |
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