(China (Mainland))
Product Summary
The 2N3879 is a Silicon NPN Power Transistor. The device is suitable for For high-speed switching and linear-amplifier applications.
Parametrics
2N3879 absolute maximum ratings: (1)VCBO, Collector-base voltage Open emitter: 120 V; (2)VCEO(SUS), Collector-emitter sustaining voltage Open base: 75 V ; (3)VEBO, Emitter-base voltage Open collector: 7 V; (4)IC, Collector current: 7 A; (5)ICM, Collector current-Peak: 10 A; (6)IB, Base current: 5 A; (7)PT, Total power dissipation TC=25℃: 35 W; (8)Tj, Junction temperature: 200℃; (9)Tstg, Storage temperature: -65 to 200℃.
Features
2N3879 features: (1)With TO-66 package; (2)Wide area of safe operation; (3)High sustaining voltage.
Diagrams
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 2N3879 |
Other |
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Data Sheet |
Negotiable |
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2N3819_D27Z_Q |
Fairchild Semiconductor |
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Data Sheet |
Negotiable |
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2N3819_D74Z |
Fairchild Semiconductor |
Transistors RF JFET NCh RF Transistor |
Data Sheet |
Negotiable |
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Data Sheet |
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2N3859A_D75Z |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Transistor General Purpose |
Data Sheet |
Negotiable |
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2N3819_D74Z_Q |
Fairchild Semiconductor |
Transistors RF JFET NCh RF Transistor |
Data Sheet |
Negotiable |
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